2N DC Current Gain. *hFE. IC=mA, VCE=10V. 30 – IC=10mA, VCE= . It is recommended that you completely review our Data Sheet(s) so as to. 2N datasheet, 2N circuit, 2N data sheet: MICRO-ELECTRONICS – NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES,alldatasheet. 2N Transistor Datasheet pdf, 2N Equivalent. Parameters and Characteristics.
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Kuthi, USA Sept Frequency at least MHz 7. Data are collected from each run and stored.
Asian sources of cheap Zetex avalanche transistors pedigree unknown. Vcbo as high as possible fewer devices: A base layer in the surface of the epitaxial layer is of thickness about one-fourth the thickness of the epitaxial 2n30020. The electric field causes migration of material in the high field region at the surface near the collector-base junction, creating the voltage instability.
I assume the reason for suggesting older devices are better, into which I read: A Documentary History of Fairchild Semiconductor.
2N Datasheet, Equivalent, Cross Reference Search. Transistor Catalog
Vcbo close to Vceo Vcbo being close to Datxsheet http: Woolston This excellent paper explores multiple Q-switch design topologies. As with the authors of most papers, I have gone the route of selecting ordinary low cost transistors. R – T R ansistor selection criteria for avalanche.
Stability on all types has been improved by power burn-in. Makers of the Microchip: I determined the breakdown voltage with the aid of a Tektronix curve tracer, see bottom of this page for further details.
However transistors were avalanched long before this, as earlier papers below reveal. Note – I have not bought from this source.
All papers referencing this transistor typically originated from his research. Fast and RF transistors tend to work as well. Instrum Vol 64, No. I intend to run more tests and measurements based on this paper. Appendix B – Subnanosecond rise time pulse generators for the rich and poor.
Selection of avalanche transistors for the LHC Project. Of the three transistors selected in paper A7, only the 2N is readily available in Pinout best suited for low C, L Using a Tektronix curve tracer on the V range, I selected all transistors that had the highest breakdown voltage. Data runs were datashert 3 to 4 months long, with readings taken weekly.
2N Datasheet(PDF) – Micro Electronics
An emitter layer in the base layer is of thickness about six-tenths the thickness of the base layer. The Zetexes are made in Russia, presumably on an old fab line.
Potential source of low cost ZTX avalanche transistors: An automatic avalanche transistor burn-in tester allows power burn-in of up to transistors at a time.
Larkin, Highland Technology Inc. Williams, 9 October