BF datasheet, BF circuit, BF data sheet: PHILIPS – NPN high-voltage transistors,alldatasheet, datasheet, Datasheet search site for Electronic. BF BF; BF; NPN High-voltage Transistors. APPLICATIONS For use in class-B video output stages in colour television receivers.. DESCRIPTION NPN. DATA SHEET. Product specification. Supersedes data of Dec Apr DISCRETE SEMICONDUCTORS. BF; BF
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NPN medium power transistor. Product specification Supersedes data of May Product specification Supersedes data of Apr Designed for use in general purpose power amplifier and switching applications. Stress above one or more of the limiting values may cause permanent damage to the device. All leads are isolated. Reporting practices for domestic and total debt securities Last updated: Rankings are broken into overall rankings and subsector rankings.
Designed for general-purpose datasjeet and low speed switching applications. Product data sheet Supersedes data of Oct Datasheets for electronics components. Plastic flash allowed within this zone mm 5.
We make every effort to understand the difficulties. Low forward voltage drop. Full Country Rankings Appendix 1: Easy pick and place. Product specification Supersedes data of Feb Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
High voltage fast-switching NPN power transistor Datasheet production data Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
BF 데이터시트(PDF) – NXP Semiconductors
Dimensions Inches Millimeters Features: They are designed for high speed. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale Apr 12 5. General description PNP datasbeet transistors. This data sheet contains final product specifications. This Datasheet is presented by the m anufacturer.
NPN general-purpose transistors in small plastic packages. We make every effort to understand the difficulties More information.
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Metal to silicon rectifier, majority carrier conduction. High surge current capability.
No liability will be accepted by the publisher for any consequence of its use. Product specification IC24 Data Handbook. BoxTelFax Belarus: Exposure to limiting values for extended periods may affect device reliability.
Product overview Type number More information. Product specification Supersedes data of Aug Philips Semiconductors, 6F, No.
BF869 Datasheet, Equivalent, Cross Reference Search
N-channel enhancement mode field-effect transistor Rev. Please v isit our website for pricing and availability at www. Quick reference data Rev.
All leads are isolated More information. Low voltage NPN power Darlington transistor. Benefit is lower component count, internal compensation for temperature and current gain spread. These are datashest ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied.
High-speed switching No secondary breakdown.
For surface mounted application.