It’s an analysis model of a BJT. Consists of a couple of diodes and current sources. The Alpha parameters are given for a particular device. saturation region and so not useful (on its own) for a SPICE model. • The started to look at the development of the Ebers Moll BJT model. • We can think of the. The Ebers-Moll transistor model is an attempt to create an electrical model of the . The Ebers-Moll BJT Model is a good large-signal, steady-state model of.

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Ebers—Moll model for an NPN transistor.

Assume there is no recombination in the depletion region. The Ebers-Moll model describes all of these bias modes. In active mode, the electric field existing between base and collector caused by V CE will cause the majority of these electrons to cross the upper P-N junction into the collector to form the collector current I C.

The minority carrier lifetime in the base is 10 ns. Since the carrier lifetime can be significantly longer than the base transit time, bt turn-off delay causes a large and undesirable asymmetry between turn-on and turn-off time.

Two commonly used HBTs are silicon—germanium and aluminum gallium arsenide, though a wide variety of semiconductors may be used for the HBT structure. Sedra and Kenneth C.

General bias modes of a bipolar transistor. For the specific case where the base-emitter and base-collector voltage are the same and the base doping is uniform, there can be no minority carrier diffusion in the base so that: Consider two diodes connected back to back in the configuration shown below.

For DC conditions they are specified mode, upper-case. The base is physically located between the emitter and the collector and is made from lightly doped, high-resistivity material.

Typically, the emitter region is heavily doped compared to the other two layers, whereas the majority charge carrier concentrations in base and collector eebers are about the same collector doping is typically ten times lighter than base doping [2]. Another model commonly used to analyze BJT circuits is the h-parameter model, closely related to the hybrid-pi model and the y-parameter two-portbut using input current and output voltage as independent variables, rather than input mldel output voltages.


The base internal current is mainly by diffusion see Fick’s law and. This base transport factor can also be expressed in function of the diffusion length in the base:. Microelectronic Circuits 5th ed. Principles, Techniques and Applications. The base transport factor equals: The junction version known as the bipolar junction transistor BJTinvented by Shockley in[11] was for three decades the device of choice in the design of discrete and integrated circuits.

In an NPN transistor, when positive bias is applied to the base—emitter junction, the equilibrium is disturbed between the thermally generated carriers and the repelling electric field of the n-doped emitter depletion region.

Simplified cross section of a planar NPN bipolar junction transistor.

The Bipolar Transistor (Ebers Moll Model)

The Ebers-Moll model is an ideal model for a bipolar transistor, which can be used, in the forward active mode of operation, in the reverse active mode, in saturation and in cut-off. It is obvious that if one junction is forward biased then other junction will be reverse biased consider for example diode D1 is forward biased and diode D2 is reverse biased much like a NPN transistor in active region according to the junction voltages only current order of reverse saturation current flows through the series junctions.

The heavy doping of the emitter region and light doping of the base region causes many more electrons to be injected from the emitter into the base than holes to be injected from the base into the emitter.

Applying anti log on both sides we get. By design, most of the BJT collector current is due to the flow of charge carriers electrons or holes injected from a high-concentration emitter into the base where they are minority carriers that diffuse toward the collector, and so BJTs are classified as minority-carrier devices.

In general, transistor-level circuit design is performed using SPICE or a comparable analog-circuit simulator, so model complexity is usually not of much concern to the designer.

NPN is one of the two types of bipolar transistors, consisting of a layer of P- doped semiconductor the “base” between two N-doped layers. Most transistors, however, have poor emitter efficiency under reverse active bias since the collector doping density is typically much less than the base doping density to ensure high base-collector breakdown voltages.


Bipolar junction transistor – Wikipedia

Various methods of manufacturing bipolar transistors were developed. For the CE topology, an approximate h-parameter model is commonly used which ehers simplifies the circuit analysis. The Schottky diode clamps the base-collector voltage at a value, which is slightly lower than the turn-on voltage of the base-collector diode.

A combination of equations 5. Input and output characteristics for a common-base silicon transistor amplifier. It is typically the emitter efficiency, which limits the current gain in transistors made of silicon or germanium.

Calculate the saturation voltage of a bipolar transistor biased with a base current of 1 mA and a collector current of 10 mA. As shown, the term, xin the model represents a different BJT lead depending on the topology used. To further simplify this model, we will assume that modl quasi-neutral regions in the device are much smaller than the minority-carrier diffusion lengths in these regions, so that the “short” diode expressions apply. That is, a PNP transistor is “on” when its base is pulled low relative to the emitter.

Charge flow in a BJT is due to diffusion of charge carriers across a junction between two regions of different charge concentrations.

Ebers Moll Model of a Bipolar Transistor – Electronics Area

The current equations derived above is interpreted in terms of a model shown in the figure. The long minority-carrier lifetime and the long diffusion lengths in those materials justify the exclusion of recombination in the base or the depletion layer.

The forward current entering the base is sweeped across into collector by the electric filed generated by the reverse bias voltage applied across the base collector junction.

Consider two diodes connected back to back in the configuration shown below back to back diodes in series. This model of transistor is known as Ebers Moll model of transistor. Fo the reverse active mode, we reverse the function of the emitter and the collector.